A scalable ferroelectric non-volatile memory operating at 600 °C
2024; Nature Portfolio; Volume: 7; Issue: 5 Linguagem: Inglês
10.1038/s41928-024-01148-6
ISSN2520-1131
AutoresDhiren K. Pradhan, David C. Moore, Gwangwoo Kim, Y. He, Pariasadat Musavigharavi, Kwan‐Ho Kim, Nishant Sharma, Zirun Han, Xingyu Du, Venkata Sreenivas Puli, Eric A. Stach, W. Joshua Kennedy, Nicholas R. Glavin, Roy H. Olsson, Deep Jariwala,
Tópico(s)Semiconductor materials and devices
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