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High-quality heteroepitaxy of ε-Ga2O3 films on 4H-SiC substrates via MOCVD

2024; Royal Society of Chemistry; Volume: 26; Issue: 25 Linguagem: Inglês

10.1039/d4ce00283k

1466-8033

Shu-Jian Chen, Zimin Chen, Weiqu Chen, Paiwen Fang, Zesheng Lv, Bindi Cai, Congcong Che, Jun Liang, Xinzhong Wang, Gang Wang, Yanli Pei,

Advanced Photocatalysis Techniques

High-quality ε-Ga 2 O 3 epitaxial layers were grown on a 4H-SiC substrate via MOCVD. A (004) XRC FWHM of the ε-Ga 2 O 3 epitaxial layer as small as 0.09° (341 arcsec) is achieved.