Capítulo de livro

RF Analysis of Tapered Angle Hetero-Junction Dopingless TFET for Low Power Applications

2024; Springer Nature; Linguagem: Inglês

10.1007/978-981-97-1571-8_30

ISSN

1867-4941

Autores

Monika Sharma, Rakhi Narang, Manoj Saxena, Mridula Gupta,

Tópico(s)

Nanowire Synthesis and Applications

Resumo

In this paper, the dopingless tunnel field effect transistor with its gate and oxide engineered structures are studied. The tapered angle hetero-junction DL-TFET shows highest ION of the order of 0.206 mA/µm. Hence, the RF performance is investigated for all the device engineered structures. With the implementation of hetero-junction in basic DL TFET structure, it increases ION current, increases cut-off frequency to 4.23 GHz, and its gain-bandwidth product increases to 1.54 GHz. Hence, Hetero-junction is further investigated by introducing the hetero-gate tapered angle oxide layer, which further increases the cut-off frequency and its gain-bandwidth product and then further optimization is done by varying the 'x' compositions of In1−xGaxAs for source side material, which results in dopingless TFET at tapered angle 'Ѳ' at 7.59º, TG (tunnelling gate work-function) at 4.2 eV with source side In1−xGaxAs composition at 0.45 is found to be most optimized structure showing highest cut-off frequency of the order of 69 GHz and gain-bandwidth product of the order of 16.9 GHz. Hence, it can be used for faster frequency application circuits.

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