Role of sulfur and phosphorous doping on the electrochemical performance of graphene oxide-based electrodes
2024; Elsevier BV; Volume: 497; Linguagem: Inglês
10.1016/j.electacta.2024.144581
ISSN1873-3859
AutoresUmar Latif, Mohsin Ali Raza, Zaeem Ur Rehman, Muhammad Faheem Maqsood, Syed Muhammad Zain Mehdi, Sharafat Ali, Muhammad Farooq Khan, Sunil Kumar,
Tópico(s)Advancements in Battery Materials
ResumoHeteroatom doping of graphene oxide (GO) with phosphorous (P), and sulfur (S) was studied. In-situ grown binder-free electrodes of these doped and un-doped GO systems were developed via hydrothermal process. S-GO, P-GO, PS-GO, and un-doped hydrothermally treated GO (H-GO) electrodes were thoroughly investigated through physical and electrochemical characterization. The PS-GO electrode, comprising P (10.90 at%), S (0.3 at%), C (45.54 at%), O (36.36 at%), and Ni (2.38 at%) atoms, exhibited a mixed morphology of a few hundred nanometers doped GO flakes and dissolved Ni foam nanorods. Electrochemical analysis showed, this mixed morphology stimulates the charge storage ability of the PS-GO electrode and achieved a high specific capacity of 1218 C/g, compared to 647 C/g for H-GO at 1 mV/s. Electrochemical analysis revealed, charge was primarily stored through the capacitive charge storage mechanism, where only surface atoms are solely responsible for developing a double layer or facilitating redox reactions between electrode atoms and electrolyte ions. Additionally, the PS-GO electrode demonstrated an energy density of 76.94 Wh/kg at 1 A/g, which is much closer to that of batteries. We anticipate that PS-GO has the potential to be utilized as electrode material in modern energy storage devices.
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