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Biaxial Tensile Strain Enhances Electron Mobility of Monolayer Transition Metal Dichalcogenides

2024; American Chemical Society; Volume: 18; Issue: 28 Linguagem: Inglês

10.1021/acsnano.3c08996

1936-086X

Jerry A. Yang, Robert K. A. Bennett, Lauren Hoang, Zhepeng Zhang, Kamila J. Thompson, Antonios Michail, John Parthenios, Konstantinos Papagelis, Andrew J. Mannix, Eric Pop,

Graphene research and applications

Strain engineering can modulate the properties of two-dimensional (2D) semiconductors for electronic and optoelectronic applications. Recent theory and experiments have found that uniaxial tensile strain can improve the electron mobility of monolayer MoS