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Hot-Electron Dynamics in a Semiconductor Nanowire under Intense THz Excitation

2024; American Chemical Society; Volume: 11; Issue: 8 Linguagem: Inglês

10.1021/acsphotonics.4c00433

2330-4022

Andrei Luferau, Maximilian Obst, Stephan Winnerl, Alexej Pashkin, Susanne C. Kehr, E. Dimakis, Felix G. Kaps, Osama Hatem, Kalliopi Mavridou, Lukas M. Eng, M. Helm,

Quantum and electron transport phenomena

We report terahertz (THz)-pump/mid-infrared probe near-field studies on Si-doped GaAs–InGaAs core–shell nanowires utilizing THz radiation from the free-electron laser FELBE. Upon THz excitation of free carriers, we observe a red shift of the plasma resonance in both amplitude and phase spectra, which we attribute to the heating of electrons in the conduction band. The simulation of heated electron distributions anticipates a significant electron population in both the L- and X-valleys. The two-temperature model is utilized for quantitative analysis of the dynamics of the electron gas temperature under THz pumping at various power levels.