Artigo Revisado por pares

Enhancing Open-Circuit Voltage in FAPbI 3 Perovskite Solar Cells via Self-Formation of Coherent Buried Interface FAPbI x Cl 3-x

2025; Royal Society of Chemistry; Linguagem: Inglês

10.1039/d4cc06599a

ISSN

1364-548X

Autores

Cuina Gao, Shujing Jia, Xiaofei Yin, Zhi Li, Guang Yang, Jing Chen, Zhaoqian Li, Xing‐Tao An,

Tópico(s)

Quantum Dots Synthesis And Properties

Resumo

The interfaces between the perovskite and charge-transporting layers typically exhibit high defect concentrations, which are the primary cause of open-circuit voltage loss.

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