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Czochralski silicon detectors irradiated with and 10MeV protons

2006; Elsevier BV; Volume: 568; Issue: 1 Linguagem: Inglês

10.1016/j.nima.2006.05.208

1872-9576

E. Tuovinen, J. Härkönen, P. Luukka, E. Tuominen, E. Verbitskaya, V. Eremin, I. Ilyashenko, A. Pirojenko, I. Riihimäki, A. Virtanen, K. Leinonen,

Semiconductor materials and interfaces

We have irradiated Czochralski silicon (Cz-Si) and Float Zone silicon (Fz-Si) detectors with 24GeV/c and 10 MeV protons. Samples were characterized with Capacitance-Voltage measurements (CV), Transient Current Technique (TCT) and secondary electron backscattering recorded by Scanning Electron Microscope (SEM). We present the evolution of the effective doping concentration as a function of irradiation fluence as well as the introduction rate of negative space charge, β-parameter. According to these measurements, we found that Cz-Si is more radiation hard than Fz-Si. Both TCT and SEM measurements indicated that Space Charge Sign Inversion (SCSI) occurred in the heavily irradiated Fz-Si and in the Cz-Si irradiated with 10 MeV protons. However, the SCSI did not take place in Cz-Si irradiated with 24GeV/c protons even after high irradiation fluence.