Investigation of grain boundaries in BaSi2 epitaxial films on Si(1 1 1) substrates using transmission electron microscopy and electron-beam-induced current technique
2012; Elsevier BV; Volume: 348; Issue: 1 Linguagem: Inglês
10.1016/j.jcrysgro.2012.03.044
ISSN1873-5002
AutoresMasakazu Baba, Katsuaki Toh, Kaoru Toko, Noriyuki Saito, Noriko Yoshizawa, Karolin Jiptner, Takashi Sekiguchi, Kosuke O. Hara, Noritaka Usami, Takashi Suemasu,
Tópico(s)Integrated Circuits and Semiconductor Failure Analysis
Resumoa-Axis-oriented undoped n-BaSi2 epitaxial films were grown on Si(111) substrates by molecular beam epitaxy, and the crystalline quality and grain boundaries were investigated by means of reflection high-energy electron diffraction, X-ray diffraction, and transmission electron microscopy (TEM). The grain size of the BaSi2 films was estimated to be approximately 0.1–0.3 μm, and straight grain boundaries (GBs) were observed in the plan-view TEM images. Dark-field TEM images under a two-beam diffraction condition showed that these GBs consist mostly of BaSi2 {011} planes. The diffusion length of minority carriers in n-BaSi2 was found to be approximately 10 μm by an electron-beam-induced current technique.
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