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Principles of circuit synthesis

1959; Elsevier BV; Volume: 268; Issue: 2 Linguagem: Inglês

10.1016/0016-0032(59)90469-7

1879-2693

E.S. Kuh, Donald O. Pederson,

Embedded Systems Design Techniques

This chapter discusses physics and applications of Metal-Insulator-Semiconductor (MIS). The basic structure of MIS diode has been shown. The surface states as well as differences in the work functions between metal and semiconductor have secondary significance in high-frequency applications, and, therefore, have been taken into account. The chapter considers the range over which MIS varactors may be driven and the surface effects have been treated in enough detail to at least estimate and put limits on their influence in high-frequency applications. It discusses the approximate characteristics and cutoff frequency and parametraicm plifiers. Operation of MIS varactors in frequency multipliers and varactors used to convert signals at intermediate frequencies to high frequencies has been discussed. MIS diode technology has not only profited from the investigations of siliconsilicon dioxide system together with other insulators, but has also contributed to the understanding of the electrical properties of semiconductor surfaces, as the MIS diode is a useful device for studying semiconductor-insulator interfaces. The chapter treats those insulators or insulator combinations that have proved to yield reliable high-frequency MIS varactors.