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A meshless scheme for the calculation of electron and hole states in laterally coupled GaAs–Ga1−Al As quantum dots under applied electric field

2015; Elsevier BV; Volume: 87; Linguagem: Inglês

10.1016/j.spmi.2015.06.026

1096-3677

Mauricio A. Londoño, Julian Rua, J.D. Giraldo-Gómez, Hebert Montegranario, M.E. Mora‐Ramos, C.A. Duque,

Quantum and electron transport phenomena

The present work deals with a theoretical study of the effects of applied electric field on the electron and hole energies in laterally coupled GaAs–(Ga,Al)As quantum dots. The calculations were performed within the effective mass and parabolic band approximations. To find the electron and hole wave functions we apply a numerical meshless scheme for solving the one particle time independent Schrödinger equation by means of collocation method with Radial Basis Functions. In particular we approximate the solutions using multiquadrics functions. Different configurations of the two coupled dots are reported (dot radius, separation between dots and applied electric field). Its has been found a significant effect of geometry and field intensity on the properties of conduction and valence band states.