ELECTRON EMISSION FROM SILICON DIOXIDE INTO VACUUM
1978; Elsevier BV; Linguagem: Inglês
10.1016/b978-0-08-023049-8.50010-5
Autores Tópico(s)Vacuum and Plasma Arcs
ResumoABSTRACT Electron emission from SiO 2 films into vacuum is investigated. Au-SiO 2 -Si structures were stressed at fields of 8-10 MV/cm (Au +) and the electrons emitted through the thin Au electrode into vacuum were collected and their energy distribution measured. For a sample with SiO 2 and Au thicknesses of 300 and 120 a respectively, electrons with kinetic energies of over 10eV were detected. The electron energy distributions had a Maxwellian tail with effective electron temperatures increasing from 0.5 to 0.8 eV with field. While these results demonstrate the existence of band gap electrons, and the possibility of impact ionization in SiO 2 , the effect of the Au electrode on the distribution prevents, at present, a quantitive comparison of these results with various dielectric breakdown theories.
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