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Effect of annealing temperature on physical and electrical properties of Bi3.25La0.75Ti3O12 thin films on Al2O3-buffered Si

2002; American Institute of Physics; Volume: 80; Issue: 11 Linguagem: Inglês

10.1063/1.1459115

1520-8842

Chia‐Liang Sun, San‐Yuan Chen, Shi-Bai Chen, Albert Chin,

Microwave Dielectric Ceramics Synthesis

The effect of annealing temperature, especially at high temperatures, on the physical and electrical properties of Bi3.25La0.75Ti3O12 (BLT) thin films on Al2O3 (10 nm)/Si has been investigated. The width of memory window in capacitance–voltage curves for BLT/Al2O3/Si capacitors annealed at temperature range of 700 °C–950 °C increases with increasing annealing temperature. At the highest annealing temperature of 950 °C, a large ferroelectric memory window of 13 V is obtained under ±15 V sweep voltage, and this large ferroelectric memory window should be related to the reduced leakage current. Owing to the excellent electrical properties, the high-temperature stable BLT/Al2O3/Si capacitor is compatible with current very large scale integrated technology process.