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Low threshold current density (760 A/cm2) and high power (45 mW) operation of strained Ga0.42In0.58P multiquantum well laser diodes emitting at 632 nm

1992; Institution of Engineering and Technology; Volume: 28; Issue: 2 Linguagem: Inglês

10.1049/el

1350-911X

A. Valster, C.J. van der Poel, M.N. Finke, M.J.B. Boermans,

Semiconductor Quantum Structures and Devices

A record low threshold current density of 760 A/cm2 has been obtained for a compressively strained multiquantum well laser emitting at 632 nm. Narrow stripe gain guided lasers show a maximum continuous output power of 45 mW with normally passivated mirrors. Stable laser operation over more than 3000 h at 40°C and 2 mW output power is reported for the first time.