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BIBTEX RIS

MOVPE grown Ga0.6In0.4Sb photodiodes for 2.55 μm detection

1992; Institution of Engineering and Technology; Volume: 28; Issue: 6 Linguagem: Inglês

10.1049/el

ISSN

1350-911X

Autores

F. Pascal‐Delannoy, J. Bougnot, Guy-Germain Allogho, Alain Giani, L. Gouskov, G. Bougnot,

Tópico(s)

Semiconductor Quantum Structures and Devices

Resumo

Photodiodes with a long-wavelength cutoff extending out to 2.9 μm have been fabricated from MOVPE-grown Ga0 6In0.4Sb homojunctions. These mesa devices without any passivation or antireflecting coating exhibit a peak efficiency as high as 43% at 2.60 μm.

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