Chapter 1 Crystal Structure, Composition, and Materials Preparation of Diluted Magnetic Semiconductors
1988; Elsevier BV; Linguagem: Inglês
10.1016/s0080-8784(08)62417-5
ISSN0080-8784
Autores Tópico(s)Magnetic and transport properties of perovskites and related materials
ResumoThis chapter discusses the crystal structure, composition, and materials preparation of diluted magnetic semiconductors. It reviews the crystal structure and composition of the various AII1−xMnxBVI alloys. It shows that this can be done in a unified way for both the zinc blende and wurtzite members of this group of materials. The chapter also describes the methods of preparation of bulk diluted magnetic semiconductors (DMS) crystals, including materials purification, the synthesis of starting binary compounds, and crystal growth. It discusses recent developments in the field of DMS, such as AII1−xMnxBVI epitaxial films and superlattices, AII1−xFexBVI alloys, and AIVBVI-based DMS containing substitutional manganese or rare earth ions. Both crystal structures of the DMS-zinc blende and wurtzite are very closely related in spite of the differences in symmetry, they are both formed with tetrahedral (s-p3) bonding, involving the two valence s-electrons of the group-VI element and the six valence p-electrons of the group-VI element. Manganese is a transition metal with valence electrons corresponding to the 4s2 orbital. Although manganese differs from the group-II elements by the fact that its 3d shell is only half-filled, it can contribute its 4s2 electrons to the s-p3 bonding and can, therefore, substitutionally replace the group-II elements in the AIIBVI wurtzite or zinc blende structures.
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